High-sensitivity graphene/Cu2O hybrid photodetectors based on photo-induced quantum capacitance
Source abstract
Abstract
Graphene/semiconductor hybrid photodetectors have attracted much attention recently for their excellent optoelectronic properties. However, high background current and 1/f noise limit their sensitivity. In this paper, the phenomenon of photo-induced quantum capacitance was found based on the transfer-free graphene/Cu2O/Cu structure. Under illumination, the Fermi level in graphene can be modulated by the photogenerated holes trapped in Cu2O nanoparticles, which causes the capacitance response phenomenon. The maximum capacitance response of 104 F/W with the minimum detectable light power of 5.3 fW was achieved at room temperature.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · ZnO doping and properties · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications 1 , Beijing 100876, China
School of Microelectronics and Control Engineering, Changzhou University 2 , Changzhou 213164, China
Funding
National Key R&D Program of China · National Natural Science Foundation of China
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