Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
Source abstract
Abstract
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min). Results from similar common-anode Schottky junctions made of Au/p-GaN, Al/Ti/p-GaN, and Au/Ti/graphene/p-GaN junctions demonstrated that all three layers (Au, Ti, and p-GaN) are essential for the increased resistance. Scanning-transmission electron microscopy, Hall, and Raman measurements have been performed to investigate the mechanisms. Moreover, this high-resistance junction structure was employed in p-GaN gate AlGaN/GaN high electron mobility transistors. It was shown to be an effective gate technology that was capable of boosting the gate breakdown voltage from 9.9 to 12.1 V with a negligible effect on the threshold voltage or the sub-threshold slope.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and interfaces · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics, Southern University of Science and Technology (SUSTech) 1 , Shenzhen 518055, China
GaN Device Engineering Technology Research Center of Guangdong, SUSTech 2 , Shenzhen 518055, China
Key Laboratory of the Third Generation Semiconductors, SUSTech 3 , Shenzhen 518055, China
Department of Materials Engineering, The University of British Columbia (UBC) 4 , Vancouver, British Columbia V6T 1Z4, Canada
School of Innovation and Entrepreneurship, SUSTech 5 , Shenzhen 518055, China
Funding
Guangdong Science and Technology Department · Shenzhen Municipal Science and Technology Innovation Council
References (26)
Show source-provided references
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