Robinson–Martin: Relating the 4¯3m and 6mm nonlinear piezoelectric tensors
Source abstract
Abstract
Binary semiconductors are central to all modern electronic, optoelectronic, and electromechanical systems. Given such practical importance, there is value in finding routes to simplify the determination of physical properties, particularly with respect to nonlinearities. Fortunately, nearly all binary semiconductors crystallize into one of two structures: cubic zinc blende or hexagonal wurtzite. Correspondences between the linear rank 3 piezoelectric and rank 4 elastic tensors of zinc blende and wurtzite polytypes have been addressed. Nonlinear rank 6 elastic tensors have similarly been discussed. Provided herein are the analogous relations for the nonlinear rank 5 tensors that have not previously been treated and which complete this missing transformation gap and enable some nonlinear atomic-level phenomena to be investigated.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Holcombe Department of Electrical and Computer Engineering, Clemson University 1 , Clemson, South Carolina 29634, USA
Department of Materials Science and Engineering, Clemson University 2 , Clemson, South Carolina 29634, USA
Funding
J. E. Sirrine Foundation
References (84)
Show source-provided references
1. Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga2O3, and diamond10.1039/c7tc02221b ↗
2. Emerging transistor technologies capable of terahertz amplification: A way to re-engineer terahertz radar sensors10.3390/s19112454 ↗
3. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz10.1088/1361-6633/aa7bb2 ↗
4. Design of nitride semiconductors for solar energy conversion10.1039/c5ta09446a ↗
5. A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications10.1088/1361-6641/32/2/023001 ↗
6. InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review10.1016/j.aeue.2018.07.015 ↗
7. Novel InP- and GaSb-based light sources for the near to far infrared10.1088/0268-1242/31/11/113005 ↗
8. Piezoelectric thin films: An integrated review of transducers and energy harvesting10.1088/0964-1726/25/5/053002 ↗
9. Review of prospective aluminium antimonide compound solar cells in photovoltaics
10. SiGe BiCMOS current status and future trends in Europe
11. Applications of SiC devices10.1016/B978-0-08-102306-8.00010-1 ↗
12. A review on Si, SiGe, GaN, SiC, InP and GaAs as enabling technologies in EW and space10.1007/978-3-319-47403-8_10 ↗
13. Group II–VI semiconductors10.1007/978-3-030-02171-9_7 ↗
14. Piezoelectricity, ferroelectricity, and crystal structure10.1007/bf01948692 ↗
15. Piezoelectricity, electrostriction and ferroelectricity
16. Theory of the piezoelectric effect in the zincblende structure10.1103/physrev.111.1510 ↗
17. Über die gitterschwingungen in kristallen mit wurtzitstruktur: III. Diskussion der schwingungszweige für spezielle richtungen bei vernachlässigung der coulomb-kräfte. Vergleich mit dem zinkblendegitter10.1515/zna-1962-0111 ↗
18. Electroelastic properties of the sulfides, selenides, and tellurides of zinc and cadmium10.1103/physrev.129.1009 ↗
19. Single crystalline elastic constants of FCC thallium-indium alloys10.1016/0001-6160(65)90079-9 ↗
20. Some elastic constants of silicon carbide10.1121/1.1909336 ↗
21. Piezoelectricity in III-V compounds with a phenomenological analysis of the piezoelectric effect10.1002/pssb.19680250131 ↗
22. Relations between the components of the non-linear polarisability tensor in cubic and hexagonal II–VI compounds10.1016/0375-9601(68)90263-6 ↗
23. Relation between elastic tensors of wurtzite and zinc-blende structure materials10.1103/physrevb.6.4546 ↗
24. Electrostatic contributions to the Brugger-type elastic constants10.1103/physrevb.6.3609 ↗
25. Relation between elastic constants of hexagonal and cubic polytypes of SiC10.1002/pssb.2220580156 ↗
26. Piezoelectricity in zincblende- and wurtzite-type crystals10.1002/pssb.2220570220 ↗
27. The study of covalent bonding by means of elastic constants
28. Relation between elastic-constant tensors of hexagonal and cubic structures10.1063/1.1663858 ↗
29. Cubic and hexagonal single-crystal elastic constants of a cobalt-nickel alloy10.1103/physrevb.12.5355 ↗
30. The single crystal elastic constants of hexagonal SiC to 1000 C10.1016/0267-3762(88)90060-4 ↗
31. Predicted elastic constants and critical layer thicknesses for cubic phase AℓN, GaN, and InN on β-SiC10.1063/1.347412 ↗
32. Electronic structure of GaN with strain and phonon distortions10.1103/physrevb.50.1502 ↗
33. Electronic structure and properties of AℓN10.1103/physrevb.49.7115 ↗
34. Lattice dynamics of SiC polytypes within the bond-charge model10.1103/physrevb.50.13401 ↗
35. Elastic properties of silicon carbide polytypes
36. Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN10.1103/physrevb.53.16310 ↗
37. Spontaneous polarization and piezoelectric constants of III-V nitrides10.1103/physrevb.56.r10024 ↗
38. Extensional piezoelectric coefficients of gallium nitride and aluminum nitride10.1063/1.125560 ↗
39. Elastic properties of gallium and aluminum nitrides10.1134/1.1262569 ↗
40. Evaluation of physical parameters for the group III nitrates: BN, AℓN, GaN, and InN10.1134/1.1434511 ↗
41. Effect of pressure on the elastic properties of silicon carbide10.1134/1.1778443 ↗
42. Elastic properties of zinc-blende and wurtzite AℓN, GaN, and InN10.1063/1.366114 ↗
43. Full piezoelectric tensors of wurtzite and zinc blende ZnO and ZnS by first-principles calculations10.1016/s0022-3697(03)00219-1 ↗
44. First-principles study on elastic properties and phase stability of III–V compounds10.1002/pssb.200301861 ↗
45. 1994 · 3
46. Nonlinear optical coefficients10.1002/j.1538-7305.1967.tb01721.x ↗
47. Phonon dispersion curves by Raman scattering in SiC, polytypes 3C, 4H, 6H, 15R, and 21R10.1103/physrev.173.787 ↗
48. Dependence of physical properties on polytype structure10.1016/B978-0-08-006768-1.50017-6 ↗
49. Lattice dynamics of cubic SiC10.1103/physrev.178.1349 ↗
50. Nonlinear dielectric polarization in optical media10.1103/physrev.126.1977 ↗
51. Piezoelectricity: Old effect, new thrusts10.1109/58.464826 ↗
52. 1895
53. 1898
54. 1928 · 307
55. The coefficients of second harmonic generation of light (SHG) of noncentrosymmetric crystals
56. Crystal potential and energy bands of semiconductors. I. Self-consistent calculations for diamond10.1103/physrev.116.880 ↗
57. Crystal potential and energy bands of semiconductors. II. Self-consistent calculations for cubic boron nitride10.1103/physrev.117.460 ↗
58. Crystal potential and energy bands of semiconductors. III. Self-consistent calculations for silicon10.1103/physrev.118.1153 ↗
59. Optical, elastic and piezoelectric properties of ionic and valence crystals with the ZnS type lattice
60. Elastic properties of diamond-type semiconductors10.1063/1.1931171 ↗
61. Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure10.1103/physrev.145.637 ↗
62. Relationship between the macroscopic and microscopic theory of crystal elasticity. I. Primitive crystals10.1103/physrev.152.774 ↗
63. Relationship between the macroscopic and microscopic theory of crystal elasticity. II. Nonprimitive crystals10.1103/physrev.169.758 ↗
64. Dielectric definition of ionicity10.1016/0009-2614(69)80231-9 ↗
65. Quantum dielectric theory of electronegativity in covalent systems. I. Electronic dielectric constant10.1103/physrev.182.891 ↗
66. Quantum dielectric theory of electronegativity in covalent systems. II. Ionization potentials and interband transition energies10.1103/physrev.187.1007 ↗
67. New set of tetrahedral covalent radii10.1103/physrevb.2.2160 ↗
68. Ionicity of the chemical bond in crystals10.1103/revmodphys.42.317 ↗
69. Quantum dielectric theory of electronegativity in covalent systems. III. Pressure-temperature phase diagrams, heats of mixing, and distribution coefficients10.1103/physrevb.7.1479 ↗
70. Bond-orbital model and the properties of tetrahedrally coordinated solids10.1103/physrevb.8.4487 ↗
71. Bond-orbital model. II10.1103/physrevb.10.1516 ↗
72. Elastic constants and phonon frequencies of wide-gap semiconductors
73. Application of Keating’s valence force field model to non-ideal wurtzite materials10.1016/j.physe.2009.11.035 ↗
74. Observation of a wurtzite form of gallium arsenide10.1103/physrevlett.95.215505 ↗
75. Why does wurtzite form in nanowires of III-V zinc blende semiconductors?10.1103/physrevlett.99.146101 ↗
76. Control of III–V nanowire crystal structure by growth parameter tuning10.1088/0268-1242/25/2/024009 ↗
77. Deduced elasticity of sp3-bonded amorphous diamond10.1063/1.5005822 ↗
78. On the anomalously strong dependence of the acoustic velocity of alumina on temperature in aluminosilicate glass optical fibers—Part II: Acoustic properties of alumina and silica polymorphs, and approximations of the glassy state10.1111/ijag.12141 ↗
79. Standards on piezoelectric crystals10.1109/JRPROC.1949.229975 ↗
80. 1987
81. The piezoelectric effect of second order in stress or strain: Its form for crystals and quasicrystals of any symmetry10.1107/s0108767307044455 ↗
82. Nonlinear piezoelectricity in wurtzite semiconductors10.1103/physrevb.88.121304 ↗
83. Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory10.1103/physrevb.91.075203 ↗
84. On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials10.1063/1.3676666 ↗