Ab-initio calculation of band alignments for opto-electronic simulations
Source abstract
Abstract
A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures. The obtained offsets and the resulting bandstructure are used as input for the microscopic calculation of photoluminescence spectra yielding very good agreement with recent experimental results.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg , 35037 Marburg, Germany
Funding
Deutsche Forschungsgemeinschaft
References (26)
Show source-provided references
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