InP double heterojunction bipolar transistors for terahertz computed tomography
Source abstract
Abstract
We present experimental studies of terahertz radiation detection by InP double heterojunction based transistors. We analyze the relation between their static characteristics and the experimentally determined voltage and current responsivities, showing importance of internal device parasitic capacitances and the external circuit loading effects. Finally, we demonstrate the use of these transistors for terahertz radiation computed tomography leading to 3D visualization of concealed objects. Our results pave the way towards wide use of heterojunction based transistors for terahertz imaging.
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Research context
OpenAlex topics: Terahertz technology and applications · Semiconductor Quantum Structures and Devices · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratoire Charles Coulomb (L2C), University of Montpellier, CNRS 1 , Montpellier, France
Department of Research and Development, T-Waves Technologies 2 , Montpellier, France
Laboratoire d’Informatique, de Robotique et de Microélectronique de Montpellier (LIRMM), University of Montpellier, CNRS 3 , Montpellier, France
III-V Lab, Campus de Polytechnique 4 , 1 Avenue Augustin Fresnel, Palaiseau, France
Funding
Agence Nationale de la Recherche
References (21)
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