Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: GaN-based semiconductor devices and materials
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Affiliations
Southern University of Science and Technology 1 Department of Electrical and Electronic Engineering, , Shenzhen, 518055, China
Shenzhen Key Laboratory of 3rd Generation Semiconductor Devices 2 , Shenzhen, China
Enkris Semiconductor Inc., NW-20v 3 , Nanopolis Suzhou, 99 Jinji Avenue, 215123, Suzhou, China
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