HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides
Source abstract
Abstract
This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated AlGaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Advanced biosensing and bioanalysis techniques · Analytical Chemistry and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
North Carolina State University 1 Department of Materials Science and Engineering, , 1001 Capability Drive Raleigh, North Carolina 27606, USA
Adroit Materials 2 , 2054 Kildaire Farm Rd., Suite 205, Cary, North Carolina 27518, USA
Funding
Army Research Office
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