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journal article·2016-02-01Open access

One electron-controlled multiple-valued dynamic random-access-memory

H. W. Kye, B. N. Song, S. E. Lee, J. S. Kim, S. J. Shin, J. B. Choi, Y.-S. Yu, Y. Takahashi

AIP Advances· Volume 6· Issue 2
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Source abstract

Abstract

We propose a new architecture for a dynamic random-access-memory (DRAM) capable of storing multiple values by using a single-electron transistor (SET). The gate of a SET is designed to be connected to a plurality of DRAM unit cells that are arrayed at intersections of word lines and bitlines. In this SET-DRAM hybrid scheme, the multiple switching characteristics of SET enables multiple value data stored in a DRAM unit cell, and this increases the storage functionality of the device. Moreover, since refreshing data requires only a small amount of SET driving current, this enables device operating with low standby power consumption.
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Research context

Electronic materials

OpenAlex topics: Quantum and electron transport phenomena · Quantum-Dot Cellular Automata · Molecular Junctions and Nanostructures

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Affiliations

Chungbuk National University 1 Dept. of Physics & Institute for Nano Science & Technology, , Cheongju 361-763, Korea

ON Semiconductor Technology Korea 2 , Seoul 137-889, Republic of Korea

WingCore Technology Inc. 3 , Seongnam 463-816, Republic of Korea

DRAM Technology Development Team, Samsung Electronics Co. 4 , Keheung 445-701, Korea

Hankyong National University 5 Dept. of Information & Control Engineering, , Ansung 456-749, Korea

Hokkaido University 6 The Graduate School of Information Science and Technology, , Sapporo 060-0814, Japan

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