Charge-induced series resistance switching in GaAs solar cells
Source abstract
Abstract
We report the observation of an abrupt decrease in the series resistance and a concurrent steep increase in the dark current at a threshold voltage, and subsequent hysteresis in the current-voltage characteristics of GaAs p-n junction solar cells. Our data suggests that the observed switch in the series resistance can be attributed to a thin insulating layer at the contact / semiconductor interface that contributes a voltage-and-light-dependent component to the solar cell series resistance.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and interfaces · Neuroscience and Neural Engineering
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Army Research Laboratory , Adelphi, Maryland 20783, USA
References (17)
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