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journal article·2016-07-01Open access

Effects of mid-gap defects and barrier interface reactions on tunneling behaviors of ZnO-i-Si heterojunctions

Chun-Fu Chang, Paritosh V. Wadekar, Wan-Chen Hsieh, Wen-Yen Lin, Yu-Sheng Wang, Jun-Hau Wang, Jyun-Jie Lin, Hui-Chun Huang, Ching-Wen Chang, Li-Wei Tu, Chih-Hsiung Liao, Hua-Hsien Liao, New-Jin Ho, Hye-Won Seo, Quark Y. Chen, Wei-Kan Chu

AIP Advances· Volume 6· Issue 7
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Source abstract

Abstract

Low-leakage pin diodes based on ZnO-i-Si are realized by redox reaction of aluminum with the native oxide SiOx into AlOx and by proper selection of annealing conditions. The main sources of electric leakage was found to arise from charge carrier tunneling via mid-gap states in the semiconductors or lowered tunneling barriers. Less mid-gap states in n-ZnO and high tunneling barrier of the i-layer are key to lowering the leakage. Proper post-annealing of pin diodes effectively heal the mid-gap defects, while maintaining the integrity of the tunneling layers, thus lowering the leakage currents to reach a rectification ratio of 2400, surpassing most similarly benchmarked devices reported in literature. Excessive annealing causes some part of the i-layer to transform into to ZnAl2O4 and Al:ZnO. High Al-doping and lowered potential barrier provided by ZnAl2O4 are responsible for high leakage currents in devices so fabricated.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Sun Yat-Sen University 1 Department of Physics, , Kaohsiung, 80424, Taiwan

National Sun Yat-Sen University 2 Department of Material Science and Optoelectronics, , Kaohsiung, 80424, Taiwan

Kaohsiung Medical University 3 Department of Medical Laboratory Science and Biotechnology, , Kaohsiung 80708, Taiwan

R.O.C Military Academy 4 Department of Physics, , Kaohsiung, 830, Taiwan

Enli Technology Co., Ltd. 5 , Kaohsiung, 821, Taiwan

Jeju National University 6 Department of Physics, , Jeju-si, 690-756, Korea

University of Houston 7 Texas Center of Superconductivity and Department of Physics, , Houston, TX, 77204, USA

Funding

University of Houston · Ministry of Science and Technology, Taiwan

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