journal article·2016-06-01Open access

Observation of strong reflection of electron waves exiting a ballistic channel at low energy

Canute I. Vaz, Changze Liu, Jason P. Campbell, Jason T. Ryan, Richard G. Southwick, David Gundlach, Anthony S. Oates, Ru Huang, Kin. P. Cheung

AIP Advances· Volume 6· Issue 6

Abstract

Wave scattering by a potential step is a ubiquitous concept. Thus, it is surprising that theoretical treatments of ballistic transport in nanoscale devices, from quantum point contacts to ballistic transistors, assume no reflection even when the potential step is encountered upon exiting the device. Experiments so far seem to support this even if it is not clear why. Here we report clear evidence of coherent reflection when electron wave exits the channel of a nanoscale transistor and when the electron energy is low. The observed behavior is well described by a simple rectangular potential barrier model which the Schrodinger’s equation can be solved exactly. We can explain why reflection is not observed in most situations but cannot be ignored in some important situations. Our experiment also represents a direct measurement of electron injection velocity - a critical quantity in nanoscale transistors that is widely considered not measurable.
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Research context

OpenAlex topics: Advancements in Semiconductor Devices and Circuit Design · Quantum and electron transport phenomena · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Institute of Standards and Technology 1 , Gaithersburg, MD 20899-8120, USA

Peking University 2 Institute of Microelectronics, , Beijing 100871, China

IBM Research 3 , Albany, NY 12205, USA

Taiwan Semiconductor Manufacturing Corporation 4 , Hsinchu 30844, Taiwan

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