The current-induced electroresistance in strain-modulated Pr0.5Sr0.5MnO3 film
Source abstract
Abstract
Pr0.5Sr0.5MnO3 films were grown on ferroelectric substrates of 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 by pulsed-laser deposition method. The film structure and lattice change with electric field applied on the substrate are examined by X-ray diffraction. The electric field dependence of resistivity was compared with electric field dependence of lattice at room temperature, revealing a relation between resistance and strain. Current-induced electroresistance (CER) was studied by using different measuring current. With increasing electric filed a colossal decrease of CER at low temperature was achieved, indicating great strain effect. The piezoelectric strain effect on the magnetoelectric coupling at multiferroic interface was discussed.
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Research context
OpenAlex topics: Multiferroics and related materials · Magnetic and transport properties of perovskites and related materials · Ferroelectric and Piezoelectric Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Zhejiang Normal University 1 , Jinhua 321004, Zhejiang, P. R. China
Department of Physics, The Pennsylvania State University 2 , University Park, PA 16802, USA
Department of Physics, The University of Hong Kong 3 , Hong Kong, P. R. China
Funding
National Natural Science Foundation of China · China Scholarship Council
References (23)
Show source-provided references
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