Ferroelectric properties of highly a-oriented polycrystalline Bi2WO6 thin films grown on glass substrates

Polycrystalline Bi2WO6 (BWO) thin films were deposited on Pt/Ta/glass substrates by pulsed laser deposition (PLD). In this study, we comparatively investigate the influence of oxygen partial pressure on structural and ferroelectric properties of the BWO films. In comparison with the BWO films deposited at oxygen partial pressure of 100 and 300 mTorr, the BWO film deposited at 300 mTorr exhibits a highly a-oriented crystalline structure. The highly a-oriented polycrystalline BWO thin film shows good ferroelectric properties with a remnant polarization of about 21.5μC/cm2. The piezoresponse force microscope study reveals that the highly a-oriented BWO thin film possesses larger ferroelectric domain patterns due to smaller domain wall energy.