Strain-induced variation in quantum dot emissions close to Si-vacancy transitions

Solid-state quantum platforms have great potential as well-controllable, scalable devices for applications in quantum communication. Semiconductor quantum dots are a leading candidate for the deterministic generation of high-quality single or entangled photons. Wavelength tunability is a fundamental requirement for the interference of a large number of local emitters, enhancing their scalability. Here, we explore the strain tuning of GaAs/AlGaAs quantum dots emitting single photons close to the transitions of negatively charged Si-vacancy centers in diamonds, which are high-performance quantum memories with an efficient spin-photon interface. The emission wavelength is tuned by applying strain to quantum-dot-containing nanomembranes via micro-structured piezoelectric actuators, and wavelength resonance is achieved between two different quantum dots in the device. Changes in the binding energy of different trion complexes are observed, as well as the reduction of the neutral exciton fine structure. We envisage that such implementations facilitate the heterogeneous integration of quantum photonic devices, integrating both solid-state quantum light sources and memories by adapting their characteristics.