Optimizing etching depth for ultra-high brightness green micro-LED display development

In recent years, micro-light-emitting diode (micro-LED) displays have attracted much attention due to their high brightness, low power consumption, long lifetime, and fast response. It is considered to have the potential to revolutionize the development direction of next-generation visual display technology. However, the development of micro-LED displays faces numerous issues, primarily due to etching processes for pixel array manufacturing, which cause sidewall damage and decreased photoelectric efficiency. Specifically, these issues are particularly serious when preparing small-sized high-resolution displays. In this work, we effectively overcame the above-mentioned problems by only etching the electron barrier during the preparation process of pixel arrays. The prepared micro-LED display exhibits excellent optoelectronic properties, with the highest brightness and current efficiency reaching 1.66 × 106 nits and 104 cd/A, respectively. The method provides a feasible idea for preparing high-performance micro-LED displays.