Back-contact perovskite light-emitting diodes
Source abstract
Abstract
Light-emitting diodes utilizing halide perovskites have experienced rapid advancements in recent years, demonstrating notable external quantum efficiencies. Despite these strides, the practical implementation of such devices remains constrained. In this contribution, we are dedicated to developing perovskite light-emitting diodes with a back-contact architecture using the MAPbBr3 active layer and SnO2 and Ni/NiOx back electrodes. The quantum efficiency of the fabricated devices stands at 0.015%. The operational voltage of the light-emitting diodes is characterized by its pronounced low values, attaining a maximum luminance of 70 cd/m2 at a mere 3.2 V. These results demonstrate the considerable promise of the developed back-contact perovskite light-emitting diodes for prospective applications in advanced display technologies and light communication systems.
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Research context
OpenAlex topics: Perovskite Materials and Applications · Organic Light-Emitting Diodes Research · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, School of Sciences and Humanities, Nazarbayev University , Astana 010000, Republic of Kazakhstan
Funding
Ministry of Education and Science of the Republic of Kazakhstan · Nazarbayev University
References (48)
Show source-provided references
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