Transient dose rate effects in silicon–germanium heterojunction bipolar transistors
Source abstract
Abstract
Transient γ-radiation and laser-simulated experiments were carried out to investigate the transient dose rate effect (TDRE) in SiGe heterojunction bipolar transistors (HBTs) for the first time. The results indicate that IBM43RF0100 SiGe HBTs experience a significant sensitivity of TDRE. For the laser-simulated experiment, the duration of transient current and charge collection are matched well with that of transient γ-radiation. The amplitude of transient photocurrent induced by the lower energy order of μJ approaches the transient photocurrent induced by transient γ-radiation. It is demonstrated that laser-simulated experiments are a candidate and a convenient method to evaluate the TDRE response of SiGe HBTs, which avoids serious electromagnetic interference in the transient γ-radiation environment.
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Research context
OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Advancements in Semiconductor Devices and Circuit Design · Radiation Effects in Electronics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Nuclear Science and Technology, Xi’an Jiaotong University 1 , Xi’an 710049, China
Northwest Institution of Nuclear Technology 2 , Xi’an 710024, China
National Space Science Center, Chinese Academy of Sciences 3 , Beijing 100190, China
Funding
National Natural Science Foundation of China · The Study Encouragement to Youth Innovation Promotion Association Outstanding Member of Chinese Academy of Science · Shaanxi Association for Science and Technology Youth Talent Support Program
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