Preparation and study of B and P doped SiNTs

The unique properties of silicon nanotubes (SiNTs) are expected to provide them with a very wide range of application potential in nanoelectronic devices, lithium-ion batteries, sensors, field-effect transistors, magnetic nanodevices, hydrogen reservoirs, optoelectronic devices, field emission display devices, and quantum computers, and they are a new one-dimensional nanomaterial with a wide range of applications in the future. Although researchers have already prepared SiNTs in the laboratory, there are not many research reports on SiNTs, especially the preparation of B and P doped SiNTs and analysis based on spectroscopic techniques. Our research group used silicon sources (SiO2 and Si) that had not been previously reported or catalyzed by the rare earth element lanthanum (La). The optimal experimental conditions for the preparation of SiNTs, as well as the doping preparation and study of B and P, were explored by thermal evaporation. Finally, SEM, Raman spectroscopy, selected area electron diffraction, HRTEM, XRD, PL spectroscopy, and other characterization methods were performed on the experimental samples. The experimental results show that 1280 °C was the best experimental temperature for the preparation of SiNTs. Under experimental conditions of 1280 °C, doping of B favored the synthesis of silicon nanowires and SiNTs, and the number of products generated was from least to most: no added B2O3 < 0.1 g B2O3 < 0.2 g B2O3 < 0.3 g B2O3 < 0.4 g B2O3. Under the experimental conditions of 1280 °C, when the amount of doped B2O3 is large (2.2 g), a “needle” structure product is generated. Under experimental conditions of 1400 °C, when the ratio of doped P to the original material is 1:9, a new material that has not been previously reported is generated. Through relevant research and the findings of this paper, it is hoped that it can be helpful for the future research and application of SiNTs.