Nanostructures arrayed broad spectrum-based rigid and flexible photodetectors with selective detection

High-performance one-dimensional (1D) CdSxSe1−x nanostructures arrayed photodetectors exhibit broad spectrum (450–750 nm) selective detection from the near-ultraviolet to the near-infrared regime, which has a great deal of interest in broad spectral flexible optoelectronic devices. Here, we report the microstamp transfer technology to construct high-performance rigid (SiO2/Si) and flexible (polyethylene terephthalate) photodetectors with broad spectrum selective detection, which was based on arrayed 1D CdSxSe1−x nanostructures obtained via chemical vapor deposition in a dual-temperature zone tube furnace. Photoresponse measurements have demonstrated their superior spectral photoresponsivity (∼105 AW−1), extremely high on/off switching ratio (105), rapid response/recovery time between 10% and 90% of the maximum photocurrent (0.089/0.044, 0.044/0.044, 0.133/0.131, and 0.178/0.180 s), and excellent long-term environmental photostability. Furthermore, the as-prepared flexible arrayed photodetector displayed excellent folding endurance properties (after 2000 times, the photocurrent decreases less than 50%) and stable electrical properties (bending angle from 0° to 150°). The improvement nanoarray technology in this research can be exploited to lead to the design of high-performance flexible photodevices comprising other 1D or 2D alloy nanomaterials.