Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation
Source abstract
Abstract
Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Science Institute, University of Iceland 1 , IS-107 Reykjavik, Iceland
Queensland Micro- and Nanotechnology Centre, Griffith University 2 , Brisbane, QLD 4111, Australia
School of Engineering and Built Environment, Griffith University 3 , Brisbane, QLD 4111, Australia
Department of Physics, Chemistry and Biology (IFM), Linköping University 4 , SE-58183 Linköping, Sweden
Funding
Rannís · University of Iceland Research Fund
References (20)
Show source-provided references
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