Analytical modeling of transport phenomena in heterojunction triple metal gate all around tunneling field effect transistor

An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap aligned heterojunction device is achieved by solving Poisson’s equation, and then, Kane’s model for band to band tunneling is used to derive the drain current of the device. The comparison between the modeling results and Technology Computer Aided Design (TCAD) simulation results with the GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction stems satisfactory consistency. The robust and compatible model approaches the surface potential, electric field, band to band tunneling generation rate, and drain current in an HTM GAA TFET in a methodical manner. The influences of gate oxide thickness, gate oxide dielectric constant, and gate metal work functions on the performance of the considered device are also investigated. To achieve an impactful perspective, the subthreshold swing, Ion/Ioff ratio, and threshold voltage of the device are reviewed as well.