journal article·2020-03-01Open access

Effects of magnetic field, electric field, and magnetic anisotropic energy on the magnetic properties of Fe alloyed GaSb diluted magnetic semiconductor

Mesfin Birile Woldetsadik, Pooran Singh, Chernet Amente Geffe

AIP Advances· Volume 10· Issue 3

Abstract

Starting with a Kondo lattice model type Hamiltonian, the effects of the magnetic field, electric field, and magnetic anisotropic energy on the magnetic properties of the Fe/GaSb diluted magnetic semiconductor are studied. The analytical technique is employed to analyze magnon dispersion, magnetization, and critical temperature, Tc. The enhancement of the temperature with increasing impurity concentration x and/or with the magnetic field and electric field is established, which is in good agreement with recent experimental observations. It is clearly shown that magnon dispersion and magnetization can be controlled with these fields applied, magnetic anisotropic energy, and impurity concentration alternatively or all together. Due to the inclusion of the magnetic anisotropic energy, we could identify a significant escalation of magnon dispersion/bandgap energy and a slight reduction of magnetization.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Magnetic and transport properties of perovskites and related materials · Magnetic properties of thin films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Physics Department, Addis Ababa University , P.O. Box 1176, Addis Ababa, Ethiopia

References (18)

Show source-provided references
1. Diluted magnetic III-V semiconductors10.1103/physrevlett.63.1849 ↗
2. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors10.1126/science.287.5455.1019 ↗
3. 2002
4. Furdyna · 1988
5. Theory of ferromagnetic (III,Mn)V semiconductors10.1103/revmodphys.78.809 ↗
6. Magnetic properties and intrinsic ferromagnetism in (Ga,Fe)Sb ferromagnetic semiconductors10.1103/physrevb.92.144403 ↗
7. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb10.1063/1.4948692 ↗
8. InAs/GaSb type-II superlattice infrared detectors: Future prospect10.1063/1.4999077 ↗
9. Growth and characterization of n-type electron-induced ferromagnetic semiconductor (In,Fe)As10.1063/1.4764947 ↗
10. Heavily Fe-doped ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy10.7567/1882-0786/ab3f4b ↗
11. Recent progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport10.1063/1.4840136 ↗
12. Magnetism in (III,Mn)-V diluted magnetic semiconductors: Effective Heisenberg model10.1103/physrevb.71.113204 ↗
13. Effective Heisenberg exchange integrals of diluted magnetic semiconductors determined within realistic multi-band tight-binding models10.1140/epjb/e2012-30795-4 ↗
14. Field dependence of the intrinsic domain magnetization of a ferromagnet10.1103/physrev.58.1098 ↗
15. Electric field controlled ferromagnetism10.1038/35050040 ↗
16. Electric-field control of ferromagnetism in (Ga,Mn)As10.1063/1.2362971 ↗
17. Spin-glass ordering in the diluted magnetic semiconductor Zn1−xMnxTe10.1103/physrevb.58.12876 ↗
18. A phenomenological theory for the spin-glass ordering in Fe doped YBa2Cu3O7+y10.1007/bf00728474 ↗