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journal article·2019-10-01Open access

Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes

Norizzawati M. Ghazali, Hiroshi Tomizawa, Noriyuki Hagiwara, Katsuya Suzuki, Abdul M. Hashim, Tomohiro Yamaguchi, Seiji Akita, Koji Ishibashi

AIP Advances· Volume 9· Issue 10
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Source abstract

Abstract

Fabrication processes have been developed to form the tunnel barriers in the suspended multi-wall carbon nanotubes (MWCNTs). Individual MWCNTs are positioned under the optical microscope to bridge them between the two metal electrodes. The tunnel barrier is formed by irradiating them with focused Ga ion beam (FIB), and its characteristics are evaluated with the resistance increase by the irradiation and the barrier height. It is found that those values depend not only on the dose of the Ga ions, but also on a diameter of the MWCNT. The single electron transistors (SETs) are fabricated by forming the double barriers in the suspended MWCNT. We find some devices show regular and stable SET behaviours.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Carbon Nanotubes in Composites · Mechanical and Optical Resonators · Force Microscopy Techniques and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Device Laboratory, RIKEN 1 , 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia 2 , Jalan Sultan Yahya Petra, Kuala Lumpur 54100, Malaysia

Graduate School of Advanced Integration Science, Chiba University 3 , Chiba 263-8522, Japan

Department of Physics and Electronics, Osaka Prefecture University 4 , 1-1 Gakuen-cho, Nakaku, Sakai, Osaka 599-8531, Japan

RIKEN Center for Emergent Matter Science (CEMS) 5 , 2-1 Hirosawa, Wako, Saitama 351-0198, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology

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