Gate field controlled and temperature dependent quantum transport in (10,0) carbon nanotube field effect transistor
Source abstract
Abstract
The cylindrically gated (10,0) carbon nanotube field effect transistor having n-i-n device structure has been simulated by using the non-equilibrium Green function method and self-consistent calculations. The gate bias polarity and device temperature have been found to significantly influence the drain current obtained from energy-position resolved current spectrum under ballistic transport limit through simulations. The effect of temperature on drain current is seen to be more pronounced in thermionic emission as compared to band-to-band tunnelling.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics & Astronomical Science, Central University of Himachal Pradesh 1 , Dharamshala, Kangra 176206, India
School of Physical Sciences, UM-DAE Centre for Excellence in Basic Sciences, University of Mumbai 2 , Kalina, Santacruz (E), Mumbai 400098, India
References (29)
Show source-provided references
1. Nanotechnology · 2006 · 18 · 02520110.1088/0957-4484/18/2/025201 ↗
2. AIP Advances · 2012 · 2 · 04140310.1063/1.4773222 ↗
3. Phys. Rev. B · 1992 · 46 · 180410.1103/physrevb.46.1804 ↗
4. Nanotechnology · 2006 · 17 · 580510.1088/0957-4484/17/23/016 ↗
5. Modern Electro Materials · 2016 · 2 · 9510.1016/j.moem.2017.02.002 ↗
6. Nano Letters · 2001 · 1 · 45310.1021/nl015606f ↗
7. Phys. Rev. Lett. · 2013 · 111 · 02680410.1103/physrevlett.111.026804 ↗
8. Journal of Semiconductors · 2014 · 35 · 07500110.1088/1674-4926/35/7/075001 ↗
9. IJAMSE · 2014 · 3 · 4
10. IEEE J. of Electron Devices Society · 2013 · 1 · 910.1109/jeds.2013.2244641 ↗
11. IEEE Trans. on Electron Dev. · 2004 · 51 · 136610.1109/ted.2004.833962 ↗
12. J. of Microelectronics · 2009 · 40 · 510.1016/j.mejo.2008.09.004 ↗
13. IEEE Trans. of Electron Dev. · 2004 · 51 · 17210.1109/ted.2003.821883 ↗
14. IEEE Trans. of Electron Dev. · 2008 · 55 · 28310.1109/ted.2007.910561 ↗
15. ECS J. of Solid State Science and Tech. · 2016 · 5 · 13110.1149/2.0021612jss ↗
16. 2005
17. Int. J. Multiscale Comput. Eng. · 2004 · 2 · 25710.1615/intjmultcompeng.v2.i2.60 ↗
18. Nano Lett. · 2004 · 4 · 44710.1021/nl035185x ↗
19. Appl. Phys. Lett. · 2005 · 87 · 25310710.1063/1.2146065 ↗
20. 1987
21. Proceedings of IEEE · 2008 · 96 · 151110.1109/jproc.2008.927355 ↗
22. Superlattices and Microstructures · 2000 · 28 · 25310.1006/spmi.2000.0920 ↗
23. Appl. Phys. Lett. · 2011 · 99 · 26310410.1063/1.3672220 ↗
24. ECS J. of Solid State Science Tech. · 2016 · 5 · 44
25. International Journal of Heat and Mass Transfer · 2017 · 112 · 90310.1016/j.ijheatmasstransfer.2017.05.036 ↗
26. Nano Letters · 2007 · 7 · 116010.1021/nl062843f ↗
27. IEEE Trans. on Electron Dev. · 2009 · 56 · 45610.1109/ted.2008.2011934 ↗
28. Appl. Phys. A · 2013 · 113 · 44710.1007/s00339-012-7543-9 ↗
29. IEEE Trans. on Electron Devices · 2003 · 50 · 185310.1109/ted.2003.815366 ↗