journal article·2017-08-01Open access

Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

C. C. Fan, Z. T. Liu, S. H. Cai, Z. Wang, P. Xiang, K. L. Zhang, W. L. Liu, J. S. Liu, P. Wang, Y. Zheng, D. W. Shen, L. X. You

AIP Advances· Volume 7· Issue 8

Abstract

High-quality (001)-oriented perovskite [(SrIrO3)m/(SrTiO3)] superlattices (m=1/2, 1, 2, 3 and ∞) films have been grown on SrTiO3(001) epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.
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Research context

OpenAlex topics: Advanced Condensed Matter Physics · Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences 1 , Shanghai 200050, China

University of Chinese Academy of Sciences 2 , Beijing 100049, China

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 3 , Nanjing 210093, China

Department of Physics, Zhejiang University 4 , Hangzhou 310027, China

CAS Center for Excellence in Superconducting Electronics (CENSE) 5 , Shanghai 200050, China

Funding

National Basic Research Program of China · National Key R&D Program of the MOST of China · Strategic Priority Research Program · National Natural Science Foundation of China

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