The growth of heteroepitaxial CuInSe2 on free-standing N-polar GaN
Source abstract
Abstract
We report that chalcopyrite CuInSe2 thin films were grown on free-standing N-polar GaN (0001̄) by molecular beam epitaxy. X-ray diffraction showed that the CuInSe2 thin film was grown in (112) orientation, and its peak of rocking curve with full width at half maximum of about 897.8 arc-sec indicated the epitaxial growth of CuInSe2 (112) film on N-polar GaN. Microstructure analysis of the CuInSe2 showed that the large lattice mismatch (28.5%) between CuInSe2 and GaN is accommodated by domain matching, and no interface reaction occurs between CuInSe2 and GaN. Our experimental results show that GaN is stable for the epitaxial growth of CuInSe2 thin film, which exhibits a promising potential for optoelectronic applications.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Multidisciplinary Science Research Center, National Sun Yat-Sen University 1 , Kaohsiung 80424, Taiwan ROC
Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University 2 Department of Physics, , Kaohsiung 80424, Taiwan ROC
National Sun Yat-Sen University 3 Department of Materials and Optoelectronic Science, , Kaohsiung 80424, Taiwan ROC
National Chiao Tung University 4 Department of Electrophysics, , Taiwan ROC
United Crystal Corporation 5 , No. 243-3, Wenshan 36061, Miaoli, Taiwan ROC
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Show source-provided references
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