journal article·2021-04-01Open access

Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

Xuemei Yin, Yayi Chen, Guoyuan Li, Wei Zhong, Sunbin Deng, Lei Lu, Guijun Li, Hoi Sing Kwok, Rongsheng Chen

AIP Advances· Volume 11· Issue 4

Abstract

We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.
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Research context

OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications

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Affiliations

School of Electronic and Information Engineering, South China University of Technology 1 , Guangzhou 510640, China

State Key Laboratory of Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology 2 , Hong Kong, China

College of Electronic Science and Technology, Shenzhen University 3 , Shenzhen 518061, China

Funding

Science and Technology Program of Guangdong Province · Key-Area Research and Development Program of Guangdong Province · Natural Science Foundation of Guangdong Province · Program for Guangdong High-Level Talents · State Key Laboratory of Advanced Displays and Optoelectronics Technologies · China Postdoctoral Science Foundation

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