Control of dielectric surface energy by dry surface treatment for high performance organic thin film transistor based on dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene semiconductor
Source abstract
Abstract
We studied organic thin film transistors using vacuum-deposited para-sexiphenyl (p-6P) as a sublayer to reduce the surface energy of the dielectric material. The correlation between the growth mode of a thin film of the organic semiconductor dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene and the number of p-6P sublayers could be explained by a surface energy difference resulting from molecular orientation changes in the p-6P layer. A local surface energy difference was confirmed by measuring the adhesion force using a nanomechanical force measurement method.
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Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Force Microscopy Techniques and Applications · Molecular Junctions and Nanostructures
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Affiliations
Organic Material Lab, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd. 1 , 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
Autonomous Material Development Lab, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd. 2 , 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea
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