journal article·2018-11-01Open access

Bilayer MoS2 quantum dots with tunable magnetism and spin

Hongping Yang, Wengen Ouyang, Xingxu Yan, Zuocheng Li, Rong Yu, Wenjuan Yuan, Jun Luo, Jing Zhu

AIP Advances· Volume 8· Issue 11

Abstract

Defects can alter the electronic, magnetic and spintronic properties of single- and few-layer MoS2 which are two-dimensional semiconductors with nonzero bandgaps. Here we discover by first-principles calculations with density functional theory that stacking faults with different rotational angles in bilayer MoS2 quantum dots modulate quantitatively the magnetism of the dots and the distributions of the spins and energy levels in their electronic structures. Our results suggest an avenue to design and tailor MoS2 quantum dots for electronics, optoelectronics, magnetics and spintronics.
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Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, The State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials (MOE), Tsinghua University 1 , Beijing 100084, China

School of Chemistry and the Sackler Center for Computational Molecular and Materials Science, Tel Aviv University 2 , Tel Aviv 6997801, Israel

Center for Electron Microscopy, TUT-FEI Joint Lab, Institute for New Energy Materials & Low-Carbon Technologies, School of Materials Science and Engineering, Tianjin University of Technology 3 , Tianjin 300384, China

Funding

National Key Research and Development Program · the Foundation for the Author of National Excellent Doctoral Dissertation · National Natural Science Foundation of China

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