Scanning nuclear electric resonance microscopy using quantum-Hall-effect breakdown

We present a scanning nuclear-spin resonance (NSR) method that incorporates resistive detection with electric-field induced NSR locally excited by a scanning metallic probe. In the quantum-Hall effect breakdown regime, NSR intensity mapping at both the fundamental NSR frequency f75As and twice the frequency 2f75As demonstrates the capability to probe the distribution of nuclear polarization, particularly in a semiconductor quantum well. We find that f75As NSR excitation drives not only local NSR but also spatially overlapped nonlocal NSR, which suppresses the maximum intensity of local NSR, while the 2f75As NSR yields purely local excitation conferring a larger intensity.