Generating and moving Dirac points in a two-dimensional deformed honeycomb lattice arrayed by coupled semiconductor quantum dots
Source abstract
Abstract
Analysis of the electronic properties of a two-dimensional (2D) deformed honeycomb structure arrayed by semiconductor quantum dots (QDs) is conducted theoretically by using tight-binding method in the present paper. Through the compressive or tensile deformation of the honeycomb lattice, the variation of energy spectrum has been explored. We show that, the massless Dirac fermions are generated in this adjustable system and the positions of the Dirac cones as well as slope of the linear dispersions could be manipulated. Furthermore, a clear linear correspondence between the distance of movement d (the distance from the Dirac points to the Brillouin zone corners) and the tunable bond angle α of the lattice are found in this artificial planar QD structure. These results provide the theoretical basis for manipulating Dirac fermions and should be very helpful for the fabrication and application of high-mobility semiconductor QD devices.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · Graphene research and applications · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, China University of Mining and Technology 1 , Xuzhou, Jiangsu Province 221116, China
School of Mechanics and Civil Engineering, China University of Mining and Technology 2 , Xuzhou, Jiangsu Province 221116, China
State Key Laboratory of Crystal Materials, Shandong University 3 , Jinan, Shandong Province 250100, China
Funding
the Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China
References (22)
Show source-provided references
1. Phys. Rev. B · 2001 · 63 · 19531110.1103/PhysRevB.63.195311 ↗
2. Appl. Phys. Lett. · 2007 · 91 · 115305
3. Phys. Rev. B · 2010 · 82 · 19532410.1103/PhysRevB.82.195324 ↗
4. Nat. Nanotechnol. · 2013 · 8 · 17010.1038/nnano.2013.5 ↗
5. Phys. Rev. Lett. · 2006 · 97 · 03680710.1103/PhysRevLett.97.036807 ↗
6. Appl. Phys. Lett. · 2010 · 97 · 24210510.1063/1.3526724 ↗
7. Appl. Phys. Lett. · 2012 · 101 · 22210810.1063/1.4768939 ↗
8. Nano Lett. · 2009 · 9 · 179310.1021/nl803706c ↗
9. Phys. Rev. Lett. · 2007 · 98 · 26040210.1103/PhysRevLett.98.260402 ↗
10. Nature · 2012 · 483 · 30210.1038/nature10871 ↗
11. Rev. Mod. Phys. · 2009 · 81 · 10910.1103/RevModPhys.81.109 ↗
12. Rev. Mod. Phys. · 2011 · 83 · 105710.1103/RevModPhys.83.1057 ↗
13. Rev. Mod. Phys. · 2010 · 82 · 304510.1103/RevModPhys.82.3045 ↗
14. Phys. Rev. Lett. · 2012 · 108 · 08680410.1103/PhysRevLett.108.086804 ↗
15. Phys. Rev. B · 2010 · 81 · 041410(R)10.1103/PhysRevB.81.041410 ↗
16. Rev. Mod. Phys. · 2010 · 82 · 267310.1103/RevModPhys.82.2673 ↗
17. Phys. Chem. Chem. Phys. · 2013 · 15 · 1885510.1039/c3cp53257g ↗
18. 1990
19. Appl. Phys. Lett. · 2002 · 81 · 36110.1063/1.1484554 ↗
20. Appl. Phys. Lett. · 2002 · 81 · 170510.1063/1.1503872 ↗
21. Appl. Phys. Lett. · 2006 · 89 · 20210110.1063/1.2388049 ↗
22. Phys. Rev. Lett. · 2006 · 96 · 06610810.1103/PhysRevLett.96.066108 ↗