journal article·2021-08-01Open access

A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation

Yunlong Guo, Liwei Guo, Kaiyao Zhou, Junwei Yang, Zhi Xu, Xuedong Bai

AIP Advances· Volume 11· Issue 8

Abstract

Graphene p–n junctions hold great potential in the fields of electronic and optoelectronic devices. Here, we develop a scheme of the in situ growth of an epitaxial graphene (EG) lateral p–n junction on a semi-insulating SiC (0001) substrate with periodic boron ion implantation, and utilizing the advantages of EG, SiC, and p–n junctions in a two-terminal device at the same time, a high-performance UV-enhanced self-powered photodetector is prepared based on an EG p–n junction with a maximum Fermi level difference of about 210 mV. Moreover, when a 325-nm laser locally irradiates the p-terminal of the device, its responsivity is about six times higher than when the laser locally irradiates the n-terminal. This indicates that EG on SiC with a p-type modulated subsurface is conducive to designing efficient UV photodetectors in which SiC serves as the gain medium. All of these characteristics facilitate the growth of EG p–n junctions on a wafer scale and the fabrication of EG p–n junctions for optoelectronic and electronic devices using standard semiconductor synthesis procedures.
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Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Research and Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190, China

University of Chinese Academy of Sciences 2 , Beijing 101408, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 4 , Beijing 100049, China

Songshan Lake Materials Laboratory 3 , Dongguan, Guangdong 523808, People’s Republic of China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 5 , Beijing 100190, China

School of Physical Sciences, University of Chinese Academy of Sciences 6 , Beijing 100190, China

Funding

Foundation for Innovative Research Groups of the National Natural Science Foundation of China · Beijing Science and Technology Planning Project

References (23)

Show source-provided references
1. Science · 2004 · 306 · 66610.1126/science.1102896 ↗
2. Appl. Phys. Lett. · 2009 · 95 · 12210210.1063/1.3224887 ↗
3. Nat. Photonics · 2010 · 4 · 61110.1038/nphoton.2010.186 ↗
4. Nat. Nanotechnol. · 2014 · 9 · 27310.1038/nnano.2014.31 ↗
5. Nano Lett. · 2012 · 12 · 306210.1021/nl300904k ↗
6. Proc. Natl. Acad. Sci. U. S. A. · 2012 · 109 · 1158810.1073/pnas.1205696109 ↗
7. Science · 2008 · 320 · 130810.1126/science.1156965 ↗
8. Chin. Phys. B · 2016 · 25 · 06720510.1088/1674-1056/25/6/067205 ↗
9. J. Phys. D: Appl. Phys. · 2017 · 50 · 40510210.1088/1361-6463/aa8206 ↗
10. Nano Lett. · 2017 · 17 · 5710.1021/acs.nanolett.6b03202 ↗
11. Nat. Nanotechnol. · 2012 · 7 · 36310.1038/nnano.2012.60 ↗
12. Nat. Photonics · 2013 · 7 · 88810.1038/nphoton.2013.241 ↗
13. Mater. Res. Express · 2019 · 6 · 0850c510.1088/2053-1591/ab251a ↗
14. Nano Lett. · 2013 · 13 · 90910.1021/nl303682j ↗
15. Appl. Phys. Lett. · 2020 · 117 · 07110210.1063/5.0012566 ↗
16. Nano Today · 2015 · 10 · 70110.1016/j.nantod.2015.11.006 ↗
17. Nat. Commun. · 2018 · 9 · 516810.1038/s41467-018-07555-6 ↗
18. Nat. Commun. · 2012 · 3 · 128010.1038/ncomms2286 ↗
19. Carbon · 2020 · 169 · 9210.1016/j.carbon.2020.07.029 ↗
20. Appl. Phys. Lett. · 2012 · 100 · 22311410.1063/1.4724208 ↗
21. Appl. Phys. Lett. · 2019 · 115 · 22210210.1063/1.5124418 ↗
22. Chin. Phys. B · 2014 · 23 · 08650110.1088/1674-1056/23/8/086501 ↗
23. Adv. Electron. Mater. · 2016 · 2 · 150025510.1002/aelm.201500255 ↗