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journal article·2021-04-01Open access

One-dimensional edge contact to encapsulated MoS2 with a superconductor

A. Seredinski, E. G. Arnault, V. Z. Costa, L. Zhao, T. F. Q. Larson, K. Watanabe, T. Taniguchi, F. Amet, A. K. M. Newaz, G. Finkelstein

AIP Advances· Volume 11· Issue 4
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Source abstract

Abstract

Establishing ohmic contact to van der Waals semiconductors such as MoS2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Sciences and Humanities, Wentworth Institute of Technology 1 , Boston, Massachusetts 02115, USA

Department of Physics, Duke University 2 , Durham, North Carolina 27708, USA

Department of Physics and Astronomy, San Francisco State University 3 , San Francisco, California 94132, USA

National Institute for Materials Science 4 , Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan

Department of Physics and Astronomy, Appalachian State University 5 , Boone, North Carolina 28607, USA

Funding

U.S. Department of Energy · National Science Foundation · U.S. Department of Defense · Core Research for Evolutional Science and Technology · Army Research Office

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