Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics
Source abstract
Abstract
We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of the FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. The responsivity can reach about 104 A/W at operating voltages lower than 1.5 V. Furthermore, its light-to-dark (on/off) current ratio and temporal response characteristics are studied numerically. A maximum on/off ratio up to 193 can be obtained by optimizing the doping concentration of Ge gate.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Neural Networks and Reservoir Computing · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Guangdong Institute of Semiconductor Industrial Technology, Guangdong Academy of Sciences , Guangzhou 510650, China
Funding
GDAS' Project of Science and Technology Development · Science and Technology Plan Project of Guangdong
References (24)
Show source-provided references
1. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip10.1038/s41586-018-0028-z ↗
2. Configurable integration of on-chip quantum dot lasers and subwavelength plasmonic waveguides10.1002/adma.201706546 ↗
3. Review of silicon photonics foundry efforts10.1109/jstqe.2013.2293274 ↗
4. Multidimensional quantum entanglement with large-scale integrated optics10.1126/science.aar7053 ↗
5. Deep learning with coherent nanophotonic circuits10.1038/nphoton.2017.93 ↗
6. Ultralow dark current Ge/Si (100) photodiodes with low thermal budget10.1063/1.3125252 ↗
7. Ge-photodetectors for Si-based optoelectronic integration10.3390/s110100696 ↗
8. Defect-free Ge-on-insulator with (100), (110), and (111) orientations by growth-direction-selected rapid-melting growth10.1063/1.3493184 ↗
9. Effects of rapid thermal process temperatures on strain and Si concentration distributions in Ge-on-insulator structures formed by rapid melt growth10.1149/2.0091407ssl ↗
10. High-performance Ge-on-Si photodetectors10.1038/nphoton.2010.157 ↗
11. High speed waveguide-integrated Ge/Si avalanche photodetector
12. Silicon germanium CMOS optoelectronic switching device: Bringing light to latch10.1109/ted.2007.908903 ↗
13. Germanium gate PhotoMOSFET integrated to silicon photonics10.1109/jstqe.2013.2294470 ↗
14. Silicon waveguide integrated germanium JFET photodetector with improved speed performance10.1109/lpt.2011.2132794 ↗
15. Photovoltage field-effect transistors10.1038/nature21050 ↗
16. Photoresponses in polycrystalline silicon phototransistors incorporating germanium quantum dots in the gate dielectrics10.1063/1.3028023 ↗
17. Designer germanium quantum dot phototransistor for near infrared optical detection and amplification10.1088/0957-4484/26/5/055203 ↗
18. Rapid melt growth of Germanium crystals with self-aligned microcrucibles on Si substrates10.1149/1.1946368 ↗
19. Germanium-on-insulator substrates by wafer bonding10.1007/s11664-004-0216-5 ↗
20. Germanium on insulator (GOI) structure using hetero-epitaxial lateral overgrowth on silicon10.1149/1.3700469 ↗
21. Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence10.1364/ol.39.006205 ↗
22. Photogating in low dimensional photodetectors10.1002/advs.201700323 ↗
23. High performance, waveguide integrated Ge photodetectors10.1364/oe.15.003916 ↗
24. 2004 · 445