Analysis and experiment of the sensitivity of AlGaN/GaN based heterostructure all-solid-state pH sensor
Source abstract
Abstract
Ion-sensitive field effect transistor (ISFET) has been widely used as a pH sensor. Its sensitivity can be expressed in terms of current or voltage which were defined by us as SA and SV in this article. Using current to represent sensitivity is more convenient for it can simplify the subsequent circuits. What’s more, SA contains more information including the geometry of the device, the parameter of the epitaxial material and the property of the sensitive membrane while SV only contains the information of the sensitive membrane, which helps us to analyze the device performance. In this paper, the sensitivity SA was deduced theoretically based on the previous research and was verified experimentally. On this basis, we put forward a method that can separate the effect of the sensitive membrane on the sensitivity from the material completely by designing a series of AlGaN/GaN based heterostructure ISFET pH sensors with different sizes of the channel area (width/length parameter). Experimental result shows the importance of this method in the future research.
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Research context
OpenAlex topics: Analytical Chemistry and Sensors · Acoustic Wave Resonator Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronics and Information Technology, Sun Yat-sen University 1 , Guangzhou 510006, P. R. China
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University 2 , Guangzhou 510275, P. R. China
Funding
International Sci.Tech. Collaboration Program of Guangzhou City,China · National Key Research and Development Program · Science&Technology Plan of Guangdong Province · the Zhuhai Key Technology Laboratory of Wide Bandgap Semiconductor Power Electronics, Sun Yat-Sen University
References (22)
Show source-provided references
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