Characteristics of InGaAsBi with various lattice mismatches on InP substrate
Source abstract
Abstract
To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In0.5Ga0.5As0.987Bi0.013, which is fairly low compared with that of In0.5Ga0.5As.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, , Shanghai 200050, China
Funding
National Basic Research Program of China
References (25)
Show source-provided references
1. Valence-band anticrossing in mismatched III-V semiconductor alloys10.1103/PhysRevB.75.045203 ↗
2. Band Anticrossing in GaInNAs Alloys10.1103/PhysRevLett.82.1221 ↗
3. Giant Spin-Orbit Bowing in GaAs1−xBix10.1103/PhysRevLett.97.067205 ↗
4. New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy10.1143/JJAP.37.L1283 ↗
5. Clustering effects in Ga(AsBi)10.1063/1.3374884 ↗
6. Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material10.1063/1.3614476 ↗
7. Temperature and Bi-concentration dependence of the bandgap and spin-orbit splitting in InGaBiAs/InP semiconductors for mid-infrared applications10.1063/1.4768532 ↗
8. InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices10.1063/1.4837615 ↗
9. Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP10.1063/1.4940201 ↗
10. Effect of bismuth on structural and electrical properties of InAs films grown on GaAs substrates by MBE10.1016/j.jcrysgro.2015.02.050 ↗
11. Proposal on a temperature-insensitive wavelength semiconductor laser
12. Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy10.1063/1.107587 ↗
13. Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAs1−xBix10.1103/PhysRevB.83.075307 ↗
14. Effect of arsenic pressure on heat treatment of liquid epitaxial GaAs10.1063/1.1653188 ↗
15. Effects of buffer layer preparation and Bi concentration on InGaAsBi epilayers grown by gas source molecular beam epitaxy10.1088/0268-1242/30/12/125001 ↗
16. Bi-induced p-type conductivity in nominally undoped Ga(AsBi)10.1063/1.3690901 ↗
17. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy10.1063/1.1760841 ↗
18. Growth of InxGa1−xAs/GaAs heterostructures using Bi as a surfactant10.1116/1.591367 ↗
19. Optimum band-gap of a thermoelectric-material10.1103/PhysRevB.49.4565 ↗
20. The effect of Bi composition to the optical quality of GaAs1−xBix10.1063/1.3617461 ↗
21. Absorption coefficients of In0.8Ga0.2As at room temperature and 77 K10.1016/j.jallcom.2013.05.224 ↗
22. The effect of boron on the doping efficiency of nitrogen in ZnO10.1016/j.jallcom.2016.02.147 ↗
23. Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence10.1063/1.4937412 ↗
24. InPBi Single Crystals Grown by Molecular Beam Epitaxy10.1038/srep05449 ↗
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