Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3
Source abstract
Abstract
Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO3 thin film deposited on a 3.6 nm-thick SrRuO3 electrode layer above an SrTiO3 (001) substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO3 layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode’s electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancy between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO3 ferroelectric barrier sandwiched between metallic SrRuO3 electrodes, since theoretical calculations generally assume ideal (stoichiometric) perovskite SrRuO3.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
East China Normal University 1 Key Laboratory of Polar Materials and Devices, Ministry of Education, , Shanghai, 200062, China
2Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587, Japan
Shanxi University 3 Collaborative Innovation Center of Extreme Optics, , Taiyuan, Shanxi 030006, China
The University of Tokyo 4 Institute of Engineering Innovation, , Tokyo 113-8656, Japan
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