journal article·2016-01-01Open access

Elemental intermixing within an ultrathin SrRuO3 electrode layer in epitaxial heterostructure BaTiO3/SrRuO3/SrTiO3

H. B. Zhang, R. J. Qi, N. F. Ding, R. Huang, L. Sun, C. G. Duan, Craig A. J. Fisher, J. H. Chu, Y. Ikuhara

AIP Advances· Volume 6· Issue 1

Abstract

Aberration corrected scanning transmission electron microscopy is used to directly observe atom columns in an epitaxial BaTiO3 thin film deposited on a 3.6 nm-thick SrRuO3 electrode layer above an SrTiO3 (001) substrate. Compositional gradients across the heterointerfaces were examined using electron energy-loss spectroscopy techniques. It was found that a small amount of Ba and Ti had diffused into the SrRuO3 layer, and that this layer contained a non-negligible concentration of oxygen vacancies. Such point defects are expected to degrade the electrode’s electronic conductivity drastically, resulting in a much longer screening length. This may explain the discrepancy between experimental measurements and theoretical estimates of the ferroelectric critical thickness of a BaTiO3 ferroelectric barrier sandwiched between metallic SrRuO3 electrodes, since theoretical calculations generally assume ideal (stoichiometric) perovskite SrRuO3.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

East China Normal University 1 Key Laboratory of Polar Materials and Devices, Ministry of Education, , Shanghai, 200062, China

2Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587, Japan

Shanxi University 3 Collaborative Innovation Center of Extreme Optics, , Taiyuan, Shanxi 030006, China

The University of Tokyo 4 Institute of Engineering Innovation, , Tokyo 113-8656, Japan

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