Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing the device configuration, the storage can be controlled by magnetic fields in different directions. The parameters of the semiconductors and the resistive switching units are experimentally investigated and simulated to optimize the performance of the devices. The key to increasing the ON/OFF ratio and reducing power consumption is finding a suitable resistance match between the semiconductor and the resistive switching unit. By enhancing the mobility of the semiconductor, the performance of the device can also be significantly improved. This hybrid device provides new insights into the manufacture of magnetic field controlled non-volatile memory devices with potential of integrating computing and storage functions.