Experimental observation of Hall resistance in CrSb2 thin films at different temperatures
Source abstract
Abstract
We report the experimental observation of Hall resistance in antiferromagnetic semiconductor CrSb2 thin films at different temperatures. By preparing the antiferromagnetic semiconductor CrSb2 via magnetron sputtering and establishing the correlation between temperature, magnetic field, and Hall resistance, this work reveals the modulation of transport properties and the regulation mechanism in the antiferromagnetic semiconductor CrSb2, providing experimental basis for the design of temperature-sensitive spintronic devices based on CrSb2.
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Research context
OpenAlex topics: Heusler alloys: electronic and magnetic properties · Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Science, Hubei Engineering Research Center of Weak Magnetic-field Detection, China Three Gorges University , Yichang 443002,
Funding
National Natural Science Foundation of China
References (29)
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