Logic implementation of 2-bit multiplier based on bidirectional rectification characteristics of hafnium-based ferroelectric diode

The “memory wall” bottleneck in the Von Neumann architecture has driven the demand for in-memory computing devices. Ferroelectric memory has emerged as a strong contender for next-generation in-memory computing devices due to its advantages of high speed and low power consumption. However, conventional perovskite materials encounter difficulties in terms of scalability and compatibility with CMOS. Hafnium oxide-based ferroelectric materials, particularly Hf0.5Zr0.5O2 (HZO), address these issues. In this work, we fabricated ferroelectric diodes based on a W/HZO/W plug structure and verified that the current in the low-resistance state conforms to the Schottky emission transport mechanism. The device demonstrates stable polarization characteristics, intrinsic bidirectional rectification characteristics, and a discernible memory window, while facilitating non-destructive readout. We proposed a 2-bit multiplier scheme based on ferroelectric diodes, which requires only 11 devices and 16 operations, with a total power consumption as low as ∼11 fJ. The resistance state encoding has enabled the logic computation scheme that functions without additional state transitions or complex peripheral control circuits. Furthermore, the bidirectional rectification characteristics of the devices inherently enable sneak-path suppression in crossbar arrays, which eliminates the need for external selector devices. This work demonstrates the potential of ferroelectric diodes in self-selective crossbar arrays and logic-in-memory systems, driving the development of low-power memory-logic integration.