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journal article·2023-09-01Open access

Gate-tunable hysteresis response of field effect transistor based on sulfurized Mo

S. Mathew, J. Reiprich, S. Narasimha, S. Abedin, V. Kurtash, S. Thiele, T. Scheler, B. Hähnlein, P. Schaaf, H. O. Jacobs, J. Pezoldt

AIP Advances· Volume 13· Issue 9
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Source abstract

Abstract

Hysteresis effects and their tuning with electric fields and light were studied in thin film molybdenum disulfide transistors fabricated from sulfurized molybdenum films. The influence of the back-gate voltage bias, voltage sweep range, illumination, and AlOx encapsulation on the hysteresis effect of the back-gated field effect transistors was studied and quantified. This study revealed the distinctive contribution of MoS2 surface, MoS2/SiO2 interface defects and their associated traps as primary sources of of hysteresis.
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Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · Advanced Memory and Neural Computing · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

FG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro- und Nanotechnologien MacroNano®, Institut für Werkstofftechnik 1 , TU Ilmenau, Postfach, 100565, 98684 Ilmenau, Germany

FG-Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik, Institut für Mikro- und Nanotechnologien MacroNano® 2 , TU Ilmenau, Gustav-Kirchhoff-Straße 5, 98693 Ilmenau, Germany

FG Technische Physik I, Institut für Physik, Institut für Mikro- und Nanotechnologien MacroNano®, Technische Universität Ilmenau 3 , 98684 Ilmenau, Germany

Funding

Carl Zeiss Foundation · Freistaat Thüringen · European Fund for Regional Development · Deutsche Forschungsgemeinschaft

References (29)

Show source-provided references
1. Mater. Today · 2017 · 20 · 11610.1016/j.mattod.2016.10.002 ↗
2. Inorg. Chem. Commun. · 2020 · 121 · 10820010.1016/j.inoche.2020.108200 ↗
3. 2022 · 7
4. 2022 · 34
5. ACS Nano · 2012 · 6 · 563510.1021/nn301572c ↗
6. Nanoscale · 2014 · 6 · 43310.1039/c3nr04218a ↗
7. Nanotechnology · 2013 · 24 · 09520210.1088/0957-4484/24/9/095202 ↗
8. 2D Mater. · 2017 · 5 · 01501410.1088/2053-1583/aa91a7 ↗
9. Appl. Phys. Lett. · 2012 · 100 · 12310410.1063/1.3696045 ↗
10. 2D Materials · 2019 · 6 · 04504910.1088/2053-1583/ab4020 ↗
11. J. Phys. Chem. Solids · 2023 · 179 · 11140610.1016/j.jpcs.2023.111406 ↗
12. Appl. Phys. Rev. · 2021 · 8 · 02130610.1063/5.0038013 ↗
13. Adv. Electron. Mater. · 2020 · 6 · 190089210.1002/aelm.201900892 ↗
14. Adv. Mater. · 2020 · 32 · 200209210.1002/adma.202002092 ↗
15. ACS Appl. Electron. Mater. · 2019 · 2 · 34610.1021/acsaelm.9b00655 ↗
16. Nat. Nanotechnol. · 2021 · 16 · 5810.1038/s41565-020-00789-w ↗
17. Adv. Electron. Mater. · 2022 · 8 · 210051510.1002/aelm.202100515 ↗
18. Nanoscale · 2021 · 13 · 1149710.1039/d1nr01683k ↗
19. ACS Appl. Nano Mater. · 2019 · 2 · 752110.1021/acsanm.9b01539 ↗
20. Appl. Phys.Lett. · 2015 · 106 · 01210410.1063/1.4905476 ↗
21. Thin Solid Films · 2017 · 641 · 7910.1016/j.tsf.2016.12.041 ↗
22. Appl. Surf. Sci. · 1993 · 65-66 · 46510.1016/0169-4332(93)90703-e ↗
23. Mater. Chem. Phys. · 1995 · 42 · 29110.1016/0254-0584(96)80017-4 ↗
24. Tribol. Lett. · 2011 · 42 · 30110.1007/s11249-011-9774-x ↗
25. Phys. Rev. B · 1999 · 60 · 288310.1103/physrevb.60.2883 ↗
26. Reversible hysteresis inversion in MoS2 field effect transistors10.1038/s41699-017-0038-y ↗
27. Appl. Sci. · 2018 · 8 · 42410.3390/app8030424 ↗
28. Nanoscale · 2016 · 8 · 304910.1039/c5nr07336g ↗
29. Micromachines · 2021 · 12 · 64610.3390/mi12060646 ↗