journal article·2021-04-01Open access

Impact of contact resistance on the performances of graphene field-effect transistor through analytical study

Md. Rasidul Islam, A. S. M. Zadid Shifat, Kong Liu, Qicong Li, Cheng Yang, Zhijie Wang, Shengchun Qu, Zhanguo Wang

AIP Advances· Volume 11· Issue 4

Abstract

Currently, owing to its remarkable electro-mechanical, thermal, and optical properties, graphene has attracted tremendous attention in the research community as one of the most prominent materials in modern electronic technology. In recent years, the graphene field-effect transistor (G-FET) has exhibited outstanding radio frequency performance and unprecedented sensitivity. Generally, the contact or parasitic resistance significantly influences the different characteristics of a large area G-FET. In this work, we have determined the effect of contact resistance from different characteristics of a G-FET. We have found that contact or parasitic resistance has a meaningful impact on the device’s different characteristics, i.e., transfer characteristics, transconductance, cut-off frequency, etc. The analytical results have indicated that the transconductance and cut-off frequency of a G-FET decrease significantly with a higher value of contact resistance. Thereafter, reducing contact resistance according to experimental conditions will predict revolutionary changes in fabrication technology for graphene-based devices.
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Research context

OpenAlex topics: Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, People’s Republic of China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, People’s Republic of China

Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology 3 , Khulna 9203, Bangladesh

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China-Guangdong Joint Fund · Key Research Program of Frontier Science, Chinese Academy of Sciences · Youth Innovation Promotion Association · Beijing Nova Program · The Strategic Priority Research Program of the Chinese Academy of Sciences · The World Academy of Sciences Scholarship

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