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journal article·2020-10-01Open access

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian

AIP Advances· Volume 10· Issue 10
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Source abstract

Abstract

In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the flexible normally-off HEMT. By testing the output characteristics and transfer characteristics of the Si-substrate HEMT and PET-substrate HEMT, we have demonstrated that the PET-substrate HEMT has excellent performance and successfully achieved the mechanical flexibility. Furthermore, we analyzed the physical mechanisms of the change in PET-substrate and Si-substrate HEMT characteristics, as well as flexible HEMT performance under bent and flattened states. The flexible HEMT array demonstrates significant potential in integration with other flexible devices, such as GaN-based micro-LED arrays.
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Research context

Electronic materials

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Nanowire Synthesis and Applications

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Affiliations

Institute for Electric Light Sources, School of Information Science and Technology, and Academy of Engineering and Technology, Fudan University 1 , Shanghai 200433, China

Nano Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Jiangsu 215123, China

Institute of Photonics, University of Strathclyde 3 , Glasgow G1 1RD, United Kingdom

Funding

Fudan University-CIOMP Joint Fund · Shanghai Technical Standard Program · The Science and Technology on Monolithic Integrated Circuits and Modules Laboratory in Nanjing Electronic Devices Institute · National Natural Science Foundation of China

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