The effect of temperature and dopant concentration on ferromagnetic properties of manganese doped zinc telluride (Zn1−xMnxTe) diluted magnetic semiconductor

Spintronics devices offer a multifunctional platform for manipulating charge and spin, underpinning advances in non-volatile memory, rapid data processing, low power consumption, and high integration density. Achieving these benefits requires semiconductor materials doped with magnetic impurities, such as transition metals, to form diluted magnetic semiconductors that exhibit both ferromagnetic and semiconducting properties. This study explores the theoretical influence of temperature and dopant concentration on the magnetic properties of manganese-doped Zn1−xMnxTe using the equation of motion approach within the Green’s function formalism. A Heisenberg-type Hamiltonian was developed and solved to derive expressions for magnon number, magnon heat capacity, and system magnetization as functions of temperature and dopant concentration (x = 0.01, 0.02, 0.03, 0.04, 0.05). Results reveal that magnon number and heat capacity increase with temperature but decrease with higher dopant concentration. Conversely, system magnetization diminishes with temperature while increasing dopant concentration enhances magnetization and raises the ferromagnetic critical temperature.