Enhancing electrical performance and stability of nanometer-thin ITO transistors via thermally oxidized alumina passivation layer
Source abstract
Abstract
In this study, we investigated the utilization of alumina (AlOx), formed through the oxidation of thermally evaporated aluminum, as a passivation layer for nanometer-thin indium-tin-oxide (ITO) transistors. The ITO transistors passivated with thermally oxidized AlOx passivation exhibited remarkable electrical properties, with an average field-effect mobility of 241 cm2/Vs, significantly higher than the 40 cm2/Vs observed for devices without the AlOx passivation layer. Moreover, the passivated transistors maintained a high on/off current ratio at 108 level. In addition, the passivated transistors demonstrated improved stability, with a decrease in the threshold voltage (Vth) shift under negative bias stress testing conducted over 3600 seconds. The ITO transistors also displayed better air-ambient stability compared to transistors without the AlOx passivation layer. These results demonstrate the potential application of alumina passivation in nanometer-thin ITO field-effect transistors.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · ZnO doping and properties · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Electronic Information, Zhongshan Institute, University of Electronic Science and Technology of China , Zhongshan 528402, China
Funding
National Natural Science Foundation of China · Guangdong Basic and Applied Basic Research Foundation · Key Scientific Research Project of the Department of Education of Guangdong Province · Zhongshan Social Public Welfare Science and Technology
References (34)
Show source-provided references
1. Vertical MoS2 transistors with sub-1-nm gate lengths10.1038/s41586-021-04323-3 ↗
2. Nanometre-thin indium tin oxide for advanced high-performance electronics10.1038/s41563-019-0455-8 ↗
3. Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire10.1038/s41586-022-04523-5 ↗
4. Nanomaterials in transistors: From high-performance to thin-film applications10.1126/science.aab2750 ↗
5. Promises and prospects of two-dimensional transistors10.1038/s41586-021-03339-z ↗
6. Scaled indium oxide transistors fabricated using atomic layer deposition10.1038/s41928-022-00718-w ↗
7. Recycled indium tin oxide transparent conductive electrode for polymer solar cells10.1007/s10853-020-04825-x ↗
8. Characterization of transparent and conductive electrodes of indium tin oxide thin films by sequential reactive evaporation10.1016/s0040-6090(99)00182-0 ↗
9. BEOL compatible indium-tin-oxide transistors: Switching of ultrahigh-density 2-D electron gas over 0.8 × 1014/cm2 at oxide/oxide interface by the change of ferroelectric polarization10.1109/ted.2021.3061038 ↗
10. 10-nm channel length indium-tin-oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL compatibility
11. Oxide electronics: Translating materials science from lab-to-fab10.1557/s43577-021-00257-3 ↗
12. Atomically thin indium-tin-oxide transistors enabled by atomic layer deposition10.1109/ted.2021.3129707 ↗
13. Vacuum-free liquid-metal-printed 2D indium–tin oxide thin-film transistor for oxide inverters10.1021/acsnano.1c11205 ↗
14. Indium–tin-oxide transistors with one nanometer thick channel and ferroelectric gating10.1021/acsnano.0c03978 ↗
15. Solution-processed ITO thin-film transistors with doping of gallium oxide show high on-off ratios and work at 1 mV drain voltage10.1063/5.0013001 ↗
16. Enhanced reliability of In–Ga–ZnO thin-film transistors through design of dual passivation layers10.1109/ted.2018.2836146 ↗
17. High mobility amorphous indium-gallium-zinc-oxide thin-film transistor by aluminum oxide passivation layer10.1109/led.2017.2702570 ↗
18. Effect of Al2O3 passivation layer and Cu electrodes on high mobility of amorphous IZO TFT10.1109/jeds.2018.2820003 ↗
19. Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer10.1016/j.surfcoat.2011.12.047 ↗
20. Performance enhancement of transparent amorphous IGZO thin-film transistor realized by sputtered amorphous AlOx passivation layer10.1149/2162-8777/abf724 ↗
21. Facile room temperature routes to improve performance of IGZO thin-film transistors by an ultrathin Al2O3 passivation layer10.1109/ted.2017.2786473 ↗
22. Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization10.1063/5.0072077 ↗
23. Short-channel graphene mixer with high linearity10.1109/led.2017.2718732 ↗
24. AlOx thin films synthesized by mist chemical vapor deposition, monitored by a fast-scanning mobility particle analyzer, and applied as a gate insulating layer in the field-effect transistors10.1021/acsaelm.0c00758 ↗
25. Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices10.35848/1347-4065/abdf74 ↗
26. Optimization of the anodization processing for aluminum oxide gate dielectrics in ZnO thin film transistors by multivariate analysis10.1021/acscombsci.8b00195 ↗
27. High-frequency, scaled graphene transistors on diamond-like carbon10.1038/nature09979 ↗
28. Scalable high performance radio frequency electronics based on large domain bilayer MoS210.1038/s41467-018-07135-8 ↗
29. Micromachines · 2022 · 13 · 189610.3390/mi13111896 ↗
30. Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility10.1063/5.0092936 ↗
31. Surrounding gate vertical-channel FET with a gate length of 40 nm using BEOL-compatible high-thermal-tolerance In-Al-Zn oxide channel10.1109/ted.2020.3021996 ↗
32. Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination10.1063/1.3597299 ↗
33. Amorphous indium tin oxide thin-film transistors fabricated by cosputtering technique10.1109/ted.2015.2513421 ↗
34. Aging effects on the stability of nitrogen-doped and un-doped InGaZnO thin-film transistors10.1016/j.mssp.2015.02.036 ↗