Room temperature transparent conducting magnetic oxide (TCMO) properties in heavy ion doped oxide semiconductor
Source abstract
Abstract
Bismuth doped ZnO (ZnBi0.03O0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.
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Research context
OpenAlex topics: ZnO doping and properties · Electronic and Structural Properties of Oxides · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Quantum-Functional Semiconductor Research Center and Nano Information Technology Academy(NITA), Dongguk University-Seoul 1 , Seoul 100-715, Republic of Korea
Division of Physics and Semiconductor Science, Dongguk University 2 , Seoul 100-715, Republic of Korea
Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University 3 , Seoul 133-791, Republic of Korea
Funding
National Research Foundation of Korea
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