journal article·2014-06-01Open access

Remarkable reduction in the threshold voltage of pentacene-based thin film transistors with pentacene/CuPc sandwich configuration

Yi Li, Qi Liu, Jing Cai, Yun Li, Yi Shi, Xizhang Wang, Zheng Hu

AIP Advances· Volume 4· Issue 6

Abstract

This study investigates the remarkable reduction in the threshold voltage (VT) of pentacene-based thin film transistors with pentacene/copper phthalocyanine (CuPc) sandwich configuration. This reduction is accompanied by increased mobility and lowered sub-threshold slope (S). Sandwich devices coated with a 5 nm layer of CuPc layer are compared with conventional top-contact devices, and results indicate that VT decreased significantly from −20.4 V to −0.2 V, that mobility increased from 0.18 cm2/Vs to 0.51 cm2/Vs, and that S was reduced from 4.1 V/dec to 2.9 V/dec. However, the on/off current ratio remains at 105. This enhanced performance could be attributed to the reduction in charge trap density by the incorporated CuPc layer. Results suggest that this method is simple and effectively generates pentacene-based organic thin film transistors with high mobility and low VT.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Nanjing University 1 Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, , Nanjing 210093, China

Nanjing University 2 School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, , Nanjing 210093, China

Funding

NSFC

References (28)

Show source-provided references
1. Appl. Phys. Lett. · 2006 · 88 · 12350210.1063/1.2186384 ↗
2. Adv. Mater. · 2010 · 22 · 379910.1002/adma.200902760 ↗
3. Adv. Mater. · 2010 · 22 · 93310.1002/adma.200900759 ↗
4. Nat. Commun. · 2012 · 4 · 185910.1038/ncomms2832 ↗
5. AIP Advances · 2012 · 2 · 02213810.1063/1.4723851 ↗
6. Adv. Mater. · 2011 · 23 · 312810.1002/adma.201101178 ↗
7. Org. Electron. · 2008 · 9 · 43210.1016/j.orgel.2008.01.008 ↗
8. Adv. Funct. Mater. · 2009 · 19 · 229410.1002/adfm.200801727 ↗
9. ACS Appl. Mater. Interfaces. · 2010 · 2 · 228210.1021/am1003377 ↗
10. J. Am. Chem. Soc. · 2005 · 127 · 1499610.1021/ja055686f ↗
11. Appl. Phys. Lett. · 2006 · 88 · 07210110.1063/1.2173633 ↗
12. Adv. Mater. · 2005 · 17 · 19210.1002/adma.200400809 ↗
13. J. Mater. Chem. · 2009 · 19 · 525010.1039/b905263a ↗
14. J. Am. Chem. Soc. · 2006 · 128 · 1285110.1021/ja063290d ↗
15. Jpn. J. Appl. Phys. · 2009 · 48 · 03150110.1143/JJAP.48.031501 ↗
16. Sci. China. Tech. Sci. · 2012 · 55 · 41710.1007/s11431-011-4693-5 ↗
17. Adv. Mater. · 2013 · 25 · 71910.1002/adma.201202789 ↗
18. J. Mater. Chem. · 2013 · 1 · 2585
19. Org. Electron. · 2013 · 14 · 114210.1016/j.orgel.2013.02.001 ↗
20. Appl. Phys. Lett. · 2010 · 97 · 24330310.1063/1.3526737 ↗
21. Appl. Phys. Lett. · 2006 · 89 · 05351010.1063/1.2227714 ↗
22. Appl. Phys. Lett. · 2005 · 87 · 02350910.1063/1.1995958 ↗
23. Appl. Phys. Lett. · 2006 · 88 · 07350510.1063/1.2173711 ↗
24. Org. Electron. · 2012 · 13 · 26410.1016/j.orgel.2011.11.012 ↗
25. Adv. Funct. Mater. · 2008 · 18 · 390710.1002/adfm.200800009 ↗
26. J. Appl. Phys. · 2001 · 90 · 134210.1063/1.1376404 ↗
27. Appl. Phys. Lett. · 2005 · 87 · 24351210.1063/1.2146059 ↗
28. Appl. Phys. Lett. · 2007 · 90 · 07350410.1063/1.2535741 ↗