Interfacial band parameters of ultrathin ALD-ZrO2 on Ga-polar GaN through XPS measurements
Source abstract
Abstract
Recent demonstrations of grafted p-n junctions combining n-type GaN with p-type semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like heterostructures. Ultrathin dielectrics deposited by atomic layer deposition (ALD) serve both as a double-sided surface passivation layer and a quantum tunneling layer. On the other hand, with excellent thermal, mechanical, and electrical properties, ZrO2 serves as a high-k gate dielectric material in multiple applications, which is also of potential interest to applications in grafted GaN-based heterostructures. In this sense, understanding the interfacial band parameters of ultrathin ALD-ZrO2 is of great importance. In this work, the band-bending of Ga-polar GaN with ultrathin ALD-ZrO2 was studied by x-ray photoelectron spectroscopy (XPS). This study demonstrated that ZrO2 can effectively suppress upward band-bending from 0.88 to 0.48 eV at five deposition cycles. The bandgap values of ALD-ZrO2 at different thicknesses were also carefully studied.
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Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of Wisconsin-Madison 1 , Madison, Wisconsin 53706, USA
Department of Physics, University of Wisconsin-Madison 2 , Madison, Wisconsin 53706, USA
Department of Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology 3 , Thuwal 23955-6900, Saudi Arabia
Funding
China Scholarship Council · Air Force Office of Scientific Research · King Abdullah University of Science and Technology
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