Advances of beveled mesas for GaN-based trench Schottky barrier diodes
Source abstract
Abstract
In this article, we propose and investigate a GaN-based trench metal–insulator–semiconductor barrier Schottky rectifier with a beveled mesa and field plate (BM-TMBS). According to our study, the beveled mesa and field plate structures help to reduce the density of potential lines at the mesa corner and deplete the drift region in two-dimensional mode, respectively. By doing so, the electric field at the bottom corner of the trenches and Schottky contact/GaN interface can be decreased significantly and the breakdown voltage can also be improved remarkably when compared with the conventional TMBS rectifiers and the planar Schottky barrier diodes. Meanwhile, assisted by the beveled mesa structure, the improved current spreading effect and a better conductivity modulation can be obtained in the forward-conduction state. Our studies also show that the electric field profiles and charge-coupling effect can be influenced by the mesa angle, the insulating layer thickness (Tox), and the trench depth (Dtr). As a result, the optimized BM-TMBS rectifiers can obtain a high BV of ∼2 kV and a current density of ∼3 kA/cm2 at the forward bias of 2 V.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Silicon Carbide Semiconductor Technologies · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology 1 , 5340 Xiping Road, Beichen District, Tianjin 300401, People’s Republic of China
Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology 2 , 5340 Xiping Road, Beichen District, Tianjin 300401, People’s Republic of China
State Key Engineering Center of Flat-Panel-Display Glass and Equipment 3 , 369 Zhujiang Road, High-Tech Zone, Shijiazhuang, Hebei Province 050035, People’s Republic of China
Funding
The National Natural Science Foundation of China · The Financial Support by the Joint Research Project for Tunghsu Group and Hebei University of Technology · Research Fund by State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology
References (50)
Show source-provided references
1. IEEE Access · 2018 · 6 · 7879010.1109/access.2018.2885285 ↗
2. J. Electron. Mater. · 2016 · 45 · 267310.1007/s11664-016-4435-3 ↗
3. IEEE Trans. Electron Devices · 2017 · 64 · 77910.1109/ted.2017.2657579 ↗
4. IEEE J. Emerging Sel. Top. Power Electron. · 2014 · 2 · 37410.1109/jestpe.2014.2313511 ↗
5. Electronics · 2019 · 8 · 57510.3390/electronics8050575 ↗
6. Jpn. J. Appl. Phys., Part 1 · 2019 · 58 · SB080510.7567/1347-4065/ab02e7 ↗
7. Appl. Phys. Lett. · 2017 · 111 · 15210210.1063/1.4993201 ↗
8. IEEE Electron Device Lett. · 2012 · 33 · 35710.1109/LED.2011.2179281 ↗
9. Phys. Status Solidi C · 2013 · 10 · 84910.1002/pssc.201200569 ↗
10. 2014 · 309
11. Appl. Phys. Lett. · 2006 · 88 · 11350910.1063/1.2186368 ↗
12. Mater. Sci. Semicond. Process. · 2018 · 78 · 7510.1016/j.mssp.2017.09.033 ↗
13. Appl. Phys. Express · 2015 · 8 · 07100110.7567/apex.8.071001 ↗
14. IEEE Trans. Power Electron. · 2019 · 34 · 501210.1109/tpel.2018.2876444 ↗
15. IEE Proc. I · 1982 · 129 · 110.1049/ip-i-1.1982.0001 ↗
16. IEEE Electron Device Lett. · 2018 · 39 · 57210.1109/led.2018.2808684 ↗
17. ECS J. Solid State Sci. Technol. · 2016 · 5 · Q17610.1149/2.0251606jss ↗
18. IEEE Electron Device Lett. · 2017 · 38 · 50910.1109/led.2017.2670925 ↗
19. Solid State Electron · 1983 · 26 · 49110.1016/0038-1101(83)90106-5 ↗
20. ECS J. Solid State Sci. Technol. · 2016 · 6 · Q1010.1149/2.0041701jss ↗
21. Solid. State. Electron. · 1995 · 38 · 80110.1016/0038-1101(94)00166-d ↗
22. 1993 · 675
23. IEEE Trans. Electron Devices · 2020 · 67 · 193110.1109/ted.2020.2978007 ↗
24. IEEE Electron Device Lett. · 2017 · 38 · 109710.1109/led.2017.2720689 ↗
25. Jpn. J. Appl. Phys., Part 2 · 1998 · 37 · L96610.1143/jjap.37.l966 ↗
26. Appl. Phys. Express · 2017 · 10 · 12100210.7567/apex.10.121002 ↗
27. Chin. Phys. B · 2015 · 24 · 07720110.1088/1674-1056/24/7/077201 ↗
28. IET Power Electron · 2014 · 7 · 32510.1049/iet-pel.2013.0173 ↗
29. Curr. Appl. Phys. · 2011 · 11 · 69810.1016/j.cap.2010.11.106 ↗
30. Mater. Sci. Forum · 2013 · 740-742 · 68710.4028/www.scientific.net/msf.740-742.687 ↗
31. 2015 · 9.7.1
32. IEEE Electron Device Lett. · 2016 · 37 · 16110.1109/led.2015.2506638 ↗
33. IEEE Trans. Electron Devices · 2008 · 55 · 184110.1109/ted.2008.926643 ↗
34. IEEE Trans. Electron Devices · 2016 · 63 · 163010.1109/ted.2016.2532602 ↗
35. IEEE Trans. Electron Devices · 2020 · 67 · 245710.1109/ted.2020.2987040 ↗
36. IEEE Electron Device Lett. · 2019 · 40 · 94110.1109/led.2019.2912395 ↗
37. IEEE Electron Device Lett. · 2020 · 41 · 46910.1109/led.2020.2970552 ↗
38. Jpn. J. Appl. Phys., Part 1 · 2017 · 56 · 12130110.7567/jjap.56.121301 ↗
39. IEEE Electron Device Lett. · 2019 · 40 · 139910.1109/led.2019.2931697 ↗
40. Phys. Rev. · 1958 · 109 · 153710.1103/physrev.109.1537 ↗
41. Appl. Phys. Lett. · 2018 · 112 · 26210310.1063/1.5031785 ↗
42. 2019 · 4.2.1
43. Appl. Phys. Lett. · 2019 · 115 · 07350310.1063/1.5099245 ↗
44. Solid State Electron · 1966 · 9 · 69510.1016/0038-1101(66)90097-9 ↗
45. Mater. Sci. Forum · 2002 · 389-393 · 116910.4028/www.scientific.net/msf.389-393.1169 ↗
46. Appl. Phys. Express · 2010 · 3 · 10100310.1143/apex.3.101003 ↗
47. Appl. Phys. Lett. · 2020 · 116 · 19210110.1063/5.0007715 ↗
48. AIP Adv. · 2020 · 10 · 12511910.1063/5.0028985 ↗
49. 2008 · 8
50. Jpn. J. Appl. Phys., Part 1 · 2019 · 58 · SCCD2510.7567/1347-4065/ab106c ↗