Investigation of device transport characteristics enhancement of In0.53Ga0.47As MOSFET through in situ NH3/N2 remote-plasma treatment
Source abstract
Abstract
In this work, we demonstrated considerable enhancement of the transport characteristics of n-type Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (n-MOSFETs) with the assistance of in situ NH3/N2 remote-plasma (RP) treatment. According to the measurement and simulation results, the RP treated sample shows superior device performances as compared to the control sample without plasma treatment including (a) improved on-current (Ion) from 8.5 mA/mm to 17 mA/mm, (b) improved transconductance (Gm) from 16.05 mS/mm to 28.52 mS/mm, (c) suppressed subthreshold swing from 189 mV/dec to 170 mV/dec, (d) suppressed drain induced barrier lowering from 36 mV/V to 28 mV/V, (e) intensified peak effective mobility (μeff) from 1896 cm2 V−1 s−1 to 2956 cm2 V−1 s−1, and (f) reduced acceptor-type density of interface trap state (Dit,A) to 44%. By using TCAD simulation, device output performance is found to be dramatically impacted by the trap state (especially acceptor-type) at the Al2O3/InGaAs interface.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
International College of Semiconductor Technology, National Chiao Tung University 1 , Hsinchu 30010, Taiwan
Department of Materials Science and Engineering, National Chiao Tung University 2 , Hsinchu 30010, Taiwan
Imec 3 , Leuven 3001, Belgium
Department of Electronics Engineering, National Chiao Tung University 4 , Hsinchu 30010, Taiwan
Funding
National Chung-Shan Institute of Science and Technology · Ministry of Science and Technology, Taiwan · Ministry of Education
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